| 摘要 |
Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is a Ga 2 O 3 MISFET (20), which includes: an n-type ²-Ga 2 O 3 single crystal film (3), which is formed on a high-resistance ²-Ga 2 O 3 substrate (2) directly or with other layer therebetween; a source electrode (22) and a drain electrode (23), which are formed on the n-type ²-Ga 2 O 3 single crystal film (3); and a gate electrode (21), which is formed on the n-type ²-Ga 2 O 3 single crystal film (3) between the source electrode (22) and the drain electrode (23). |
