METAL BONDING METHOD FOR LOW RESISTANCE OF P-TYPE SEMICONDUCTOR LAYER AND METAL BONDING STRUCTURE

摘要

The present invention relates to a low-resistance metal bonding method of a P-type semiconductor layer and a metal bonding structure, the metal bonding method of a P-type semiconductor layer comprising: a first step of a Ga_2O_3 thin film on a nitride semiconductor layer to which P-type impurities are doped; a second step of performing a hydrogen plasma process on the nitride semiconductor layer on which the Ga_2O_3 thin film is formed, to remove an oxygen component from the Ga_2O_3 thin film, thereby forming metallic Ga clusters on the semiconductor layer; and a third step of forming a metal layer on the nitride semiconductor layer on which the Ga clusters are formed.