Light-emitting diode and fabrication method thereof

摘要

A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

主权项

1. A light emitting diode, comprising:
a substrate having front and back main surfaces, and at least one V-shaped groove having a reflecting surface formed over the front main surface of the substrate; a light-emitting epitaxial layer over the substrate, wherein a peripheral region of the light-emitting epitaxial layer has a vertical projection between a bottom and an inner portion of the V-shaped groove, such that light emitted from the light-emitting epitaxial layer peripheral region is incident upon the reflecting surface of the V-shaped groove and reflected outwards.