| 发明名称 | Methods of fabricating semiconductor devices having punch-through stopping regions | ||
| 摘要 | Methods of fabricating semiconductor devices are provided including providing a substrate having a first region and a second region, the substrate defining trenches in the first and second regions; forming active fins on the first and second regions, the active fins protruding from the trenches in the first and second regions; forming spacers on sidewalls of the active fins in the first and second regions; recessing floors of the trenches under the spacers to provide extensions of the active fins; implanting impurities of a first type in the extensions of the active fins in the first region; and implanting impurities of a second, type, different from the first type, in the extensions of the active fins in the second region. | ||
| 申请公布号 | US9184293(B2) | 申请公布日期 | 2015.11.10 |
| 申请号 | US201414454943 | 申请日期 | 2014.08.08 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim Jong-Un;Song Hyun-Seung;Kim Dong-Hyun |
| 分类号 | H01L27/20;H01L29/78;H01L21/266;H01L21/8238;H01L27/092 | 主分类号 | H01L27/20 |
| 代理机构 | Myers Bigel Sibley & Sajovec | 代理人 | Myers Bigel Sibley & Sajovec |
| 主权项 | 1. A method of fabricating a semiconductor device, comprising: providing a substrate having a first region and a second region, the substrate defining trenches in the first and second regions; forming active fins on the first and second regions, the active fins protruding from the trenches in the first and second regions; forming spacers on sidewalls of the active fins in the first and second regions; recessing floors of the trenches under the spacers to provide extensions of the active fins; implanting impurities of a first type in the extensions of the active fins in the first region; and implanting impurities of a second type, different from the first type, in the extensions of the active fins in the second region. | ||
| 地址 | KR | ||