Native PMOS device with low threshold voltage and high drive current and method of fabricating the same

摘要

A native p-type metal oxide semiconductor (PMOS) device that exhibits a low threshold voltage and a high drive current over a varying range of short channel lengths and a method for fabricating the same is discussed in the present disclosure. The source and drain regions of the native PMOS device, each include a strained region, a heavily doped raised region, and a lightly doped region. The gate region includes a stacked layer of a gate oxide having a high-k dielectric material, a metal, and a contact metal. The high drive current of the native PMOS device is primarily influenced by the increased carrier mobility due to the strained regions, the lower drain resistance due to the raised regions, and the higher gate capacitance due to the high-k gate oxide of the native PMOS device.

主权项

1. A P-type metal-oxide semiconductor (PMOS) device, comprising:
a substrate having a first material and a first type conductivity different from a second type conductivity; a deep well region, having the second type conductivity, dividing the substrate into a first substrate region having the second type conductivity and a second substrate region having the first type conductivity; a source region having a second material configured to provide a first strained region in the first substrate region; a drain region having the second material configured to provide a second strained region in the first substrate region; and a gate region between the source region and the drain region, the gate region comprising:
a first layer having a first thickness;a second layer having a second thickness, the second thickness being greater than the first thickness; anda third layer having a third thickness, the third thickness being greater than the second thickness.