发明名称 |
Flash memory embedded with HKMG technology |
摘要 |
An integrated circuit structure includes a flash memory cell and a logic MOS device. The flash memory cell includes a floating gate dielectric, a floating gate overlying the floating gate dielectric, a control gate overlying the floating gate, a word-line on a first side of the floating gate and the control gate, and an erase gate on a second side of the floating gate and the control gate. The logic MOS device includes a high-k gate dielectric, and a gate electrode over the high-k gate dielectric. The gate electrode, the control gate, the word-line, and the erase gate are formed of a same metal-containing material, and have top surfaces coplanar with each other. |
申请公布号 |
US9184252(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US201414182642 |
申请日期 |
2014.02.18 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chuang Harry-Hak-Lay;Wu Wei Cheng |
分类号 |
H01L29/788;H01L29/49;H01L27/115;H01L29/51 |
主分类号 |
H01L29/788 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. An integrated circuit structure comprising:
a flash memory cell comprising:
a floating gate dielectric;a floating gate overlying the floating gate dielectric;a control gate overlying the floating gate;a word-line on a first side of the floating gate and the control gate; andan erase gate on a second side of the floating gate and the control gate, wherein the control gate, the word-line, and the erase gate comprise a metal; and a logic Metal-Oxide Semiconductor (MOS) device having a gate electrode, wherein the gate electrode, the control gate, the word-line, and the erase gate comprise a same metal-containing material, and top surfaces of the gate electrode, the control gate, the word-line, and the erase gate are coplanar. |
地址 |
Hsin-Chu TW |