发明名称 |
Method of transferring graphene using trench and substrate for receiving graphene |
摘要 |
A method of transferring graphene includes patterning an upper surface of a substrate to form at least one trench therein, providing a graphene layer on the substrate, the graphene layer including an adhesive liquid thereon, pressing the graphene layer with respect to the substrate, and removing the adhesive liquid by drying the substrate. |
申请公布号 |
US9184236(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US201213589650 |
申请日期 |
2012.08.20 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Seo David;Heo Jin-seong;Chung Hyun-jong;Yang Hee-jun;Park Seong-jun;Song Hyun-jae |
分类号 |
H01L29/16;H01L21/20 |
主分类号 |
H01L29/16 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A method of transferring graphene, the method comprising:
patterning an upper surface of a substrate to form at least one trench therein; providing a graphene layer on the substrate, the graphene layer including an adhesive liquid thereon, wherein the providing sequentially stacks a protective layer and a supporting layer on the graphene layer and wherein the adhesive liquid is included only on a surface of the graphene layer facing the substrate; pressing the graphene layer with respect to the substrate by sliding a roller on the supporting layer to press the adhesive liquid into the plurality of trenches; andremoving the adhesive liquid by drying the substrate. |
地址 |
Gyeonggi-do KR |