Semiconductor devices and methods of fabricating semiconductor devices

摘要

Semiconductor devices are provided. A semiconductor device may include a substrate and a plurality of lines on the substrate. The semiconductor device may include a dielectric layer on the substrate and adjacent the plurality of lines. The semiconductor device may include a connection element in the dielectric layer. In some embodiments, the semiconductor device may include a plurality of contacts on the connection element, and a conductive interconnection on one of the plurality of contacts that are on the connection element and on a contact that is spaced apart from the connection element.

主权项

1. A semiconductor device comprising:
a substrate; spaced-apart first and second conductive lines extending in a first direction on the substrate; an interlayer dielectric on the first and second conductive lines; first and second contact plugs in the interlayer dielectric and contacting the first and second conductive lines, respectively; and a connection structure configured to electrically connect the first and second conductive lines, the connection structure comprising a connection element extending in a second direction that intersects the first direction, wherein the connection element is disposed in the interlayer dielectric, wherein the connection element is vertically non-overlapping with the first and second conductive lines and is spaced apart from the first and second contact plugs, and wherein a top surface of the connection element is substantially coplanar with respective top surfaces of the first and second contact plugs.