Memory cell support lattice

摘要

Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.

主权项

1. A method of forming a memory cell support lattice, the method comprising:
forming a mask on and in contact with a number of capacitor elements in an array, the mask is in contact with an upper surface and a portion of a sidewall of the number of capacitor elements, and there is an opening between the mask and an upper surface of a support material surrounding the number of capacitor elements, and forming the mask on the number of capacitor elements includes forming the mask such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered; and forming a support lattice in the support material by etching the support material to remove portions of the support material below the openings in the mask, a space exists between an upper surface of the support material and a lower surface of the mask.