发明名称 |
Wafer level optical device |
摘要 |
Technologies are generally described for fabricating a wafer level optical device using a plurality of substrates made of materials with a substantially compatible (e.g., same or similar) thermal expansion coefficient. An example device may include a first substrate including light-receiving or light-emitting elements, and a second substrate including optical elements located within through-holes of the second substrate. The through-holes can be configured to substantially align each of the light-receiving or light-emitting elements with a corresponding one of the optical elements. A thermal expansion coefficient of the second substrate can be configured to be substantially the same to a thermal expansion coefficient of the first substrate. |
申请公布号 |
US9182545(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US201214009098 |
申请日期 |
2012.10.25 |
申请人 |
Empire Technology Development LLC |
发明人 |
Goto Hiroshi |
分类号 |
G02B6/12;G02B6/13;H01L31/0232;H01L27/146;H04N5/225 |
主分类号 |
G02B6/12 |
代理机构 |
Turk IP Law, LLC |
代理人 |
Turk IP Law, LLC |
主权项 |
1. An optical device, comprising:
a first substrate including light-receiving elements; a second substrate disposed on the first substrate, wherein the second substrate includes optical elements located within through-holes of the second substrate, and the through-holes are configured to substantially align each of the optical elements in the second substrate with a corresponding one of the light-receiving elements in the first substrate; a spacer substrate disposed between the first substrate and the second substrate; and one or more light sources provided above the second substrate, wherein the one or more light sources are configured to irradiate a light through each of the optical elements in the second substrate onto the corresponding one of the light-receiving elements in the first substrate such that a position of each of the optical elements in the second substrate is adjusted relative to the corresponding one of the light-receiving elements in the first substrate based on a light intensity detected by the light-receiving elements. |
地址 |
Wilmington DE US |