发明名称 |
Solid-state imaging device, method of driving the same, signal processing method for the same, and imaging apparatus |
摘要 |
Disclosed herein is a solid-state imaging device, including, a pixel array unit, first driving means, second driving means, and third driving means. |
申请公布号 |
US9185313(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US200812099918 |
申请日期 |
2008.04.09 |
申请人 |
SONY CORPORATION |
发明人 |
Oike Yusuke |
分类号 |
H04N3/14;H04N5/355;H04N5/359;H04N5/345;H04N5/374;H04N5/335 |
主分类号 |
H04N3/14 |
代理机构 |
Sheridan Ross P.C. |
代理人 |
Sheridan Ross P.C. |
主权项 |
1. A solid-state imaging device, comprising:
a pixel array section constituted by unit pixels arranged in a matrix, at least one of said unit pixels including a photoelectric conversion unit configured to convert an optical signal into signal charges, a transfer element configured to include a gate electrode and configured to transfer the signal charges obtained through photoelectric conversion of accumulated charges during an exposure period in said photoelectric conversion unit to a floating diffusion element and a reset element configured to reset the floating diffusion element; a vertical scanning circuit including a first driving section and a second driving section; a horizontal scanning circuit that outputs signals held in a set of at least one column circuit, wherein each column circuit receives the signals output by a row of pixels in the unit pixels selected by the vertical scanning circuit; the first driving section configured to, after resetting the signal charges and after the exposure period, drive said transfer element using at least one of a set of intermediate voltages that are each effective to provide only a partial transfer of the accumulated charges in the photoelectric conversion unit based on a charge capacity of the floating diffusion element when the reset element is turned off, the intermediate voltages being different voltage values that are applied to said transfer element; and the second driving section configured to drive said transfer element using another voltage that is different from said intermediate voltages, after the exposure period. |
地址 |
JP |