Semiconductor device packages including thermally insulating materials and methods of making and using such semiconductor packages

摘要

Semiconductor devices may include a first semiconductor die comprising a heat-generating region located at a periphery thereof. A second semiconductor die is attached to the first semiconductor die. At least a portion of the heat-generating region is located laterally outside a footprint of the second semiconductor die. A thermally insulating material is located on a side surface of the second semiconductor die. Methods of forming semiconductor devices may involve attaching a second semiconductor die to a first semiconductor die. The first semiconductor die includes a heat-generating region at a periphery thereof. At least a portion of the heat-generating region is located laterally outside a footprint of the second semiconductor die. A thermally insulating material is located on a side surface of the second semiconductor die.

主权项

1. A semiconductor device, comprising:
a first semiconductor die comprising a heat-generating region located at a periphery of the first semiconductor die; a second semiconductor die physically attached and electrically connected to the first semiconductor die, at least a portion of the heat-generating region located laterally outside a footprint of the second semiconductor device; a thermally insulating material located on a side surface of the second semiconductor die; and a thermally conductive overmold located at least partially over the first and second semiconductor dice and the thermally insulating material; wherein a thermal conductivity of the thermally insulating material is less than a thermal conductivity of the thermally conductive overmold.