发明名称 |
Method for producing an optoelectronic nitride compound semiconductor component |
摘要 |
A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminum-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers. |
申请公布号 |
US9184051(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US201214346787 |
申请日期 |
2012.09.21 |
申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
Stauss Peter;Drechsel Philipp |
分类号 |
H01L21/02;H01L33/00;H01L33/12 |
主分类号 |
H01L21/02 |
代理机构 |
DLA Piper LLP (US) |
代理人 |
DLA Piper LLP (US) |
主权项 |
1. A method of producing a nitride compound semiconductor component comprising:
providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminium-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure comprises a first GaN semiconductor layer and a second GaN semiconductor layer, a dopant concentration in the first and/or second GaN semiconductor layer is not more than 1*1019 cm−3, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, the stress layer structure does not contain further Al(Ga)N-intermediate layers, and a dislocation density in the functional semiconductor layer sequence is less than 5×108 cm−2. |
地址 |
DE |