发明名称 Conductive hard carbon film and method for forming the same
摘要 A film is formed under vacuum by a step of purifying and/or flattening the base material (13) by irradiating the base material (13) with a gas cluster ion beam (4a); by a step of forming an intermediate layer film by evaporating/vaporizing an intermediate layer film forming material, allowing the evaporated/vaporized material to adhere to the surface of the base material (13), and irradiating the intermediate layer film forming material with a gas cluster ion beam (4a); and by evaporating/vaporizing a carbon film forming material containing a carbonaceous material containing substantially no hydrogen, and a boron material, allowing the evaporated/vaporized material to adhere to the surface of the intermediate layer film, and irradiating the carbon film forming material with a gas cluster ion beam (4a).
申请公布号 US9183965(B2) 申请公布日期 2015.11.10
申请号 US201113885623 申请日期 2011.11.28
申请人 NOMURA PLATING CO., LTD. 发明人 Kitagawa Teruyuki;Nomura Shuhei
分类号 C23C14/06;H01B1/04;C23C14/02;C23C14/22;C01B31/02;C23C14/34;G01R1/067 主分类号 C23C14/06
代理机构 Marshall, Gerstein & Borun LLP 代理人 Marshall, Gerstein & Borun LLP
主权项 1. A method for vapor-phase formation of a conductive hard carbon film on a base material under vacuum, the method comprising a step of purifying and/or flattening the base material by irradiating the base material with a gas cluster ion beam; a step of evaporating/vaporizing a carbon film forming material containing a carbonaceous material containing substantially no hydrogen and a borohydride material, allowing the evaporated/vaporized material, which is optionally ionized, to adhere to the surface of the base material, and irradiating the carbon film forming material with a gas cluster ion beam for film formation; and a step of decomposing the borohydride into hydrogen and boron when the gas cluster ions collide against the surface of the base material, allowing the decomposed hydrogen to go out of the conductive hard carbon film, allowing less than or equal to 1 atom percent or less of the hydrogen to remain in the conductive hard carbon film, and allowing the decomposed boron to remain in the conductive hard carbon film.
地址 Osaka JP