发明名称 MEMS devices and methods of forming the same
摘要 A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
申请公布号 US9181083(B2) 申请公布日期 2015.11.10
申请号 US201414484540 申请日期 2014.09.12
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Tsai Shang-Ying;Lin Hung-Hua;Pan Lung Yuan;Huang Yao-Te;Huang Hsin-Ting;Peng Jung-Huei
分类号 H01L29/49;B81C1/00;G01P15/08;G01P15/125;B81B7/00;H01G5/18;H01L49/02 主分类号 H01L29/49
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method comprising: forming a routing conductive line over a substrate; forming a dielectric layer over the routing conductive line; forming an escort ring over the dielectric layer; forming a sacrificial layer over the escort ring; forming an opening in the sacrificial layer, the escort ring, and the dielectric layer, wherein the routing conductive line is exposed through the opening; forming a contact plug in the opening; forming a conductive component over and connected to the contact plug, wherein the conductive component forms a portion of a Micro-Electro-Mechanical System (MEMS) device; and removing the sacrificial layer to form an air gap.
地址 Hsin-Chu TW