| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition showing high dissolution contrast and high sensitivity in organic solvent development, and to provide a pattern forming method for forming a hole pattern through a positive-negative reversal process by development with an organic solvent.SOLUTION: The pattern forming method comprises: applying the following resist composition on a substrate to form a resist film, followed by a heating treatment: then exposing the resist film to a high energy beam, followed by a heating treatment; and dissolving an unexposed part by use of a developing solution comprising an organic solvent to obtain a negative pattern where an exposed part is not dissolved. The resist composition comprises: a polymeric compound having a repeating unit in which a hydroxy group is substituted with an acid-labile group and an acid generator, or a polymeric compound having a repeating unit in which a hydroxy group is substituted with an acid-labile group and a repeating unit that generates an acid by exposure; a sulfonium salt or an iodonium salt of fluoroalkyl sulfonamide; and an organic solvent. The photoresist film thus obtained has a high solubility in an unexposed part and a low solubility in an exposed part and shows high dissolution contrast in image formation through a positive-negative reversal process by development with an organic solvent. |
