| 摘要 |
A semiconductor device includes: a first semiconductor layer (100) of a first conductivity type; a second semiconductor layer (113) of a second conductivity type on the first semiconductor layer (100); trenches (103) in the first semiconductor layer (100); a semiconductor protruding part (104) on the first semiconductor layer (100); a third semiconductor layer (101) on the semiconductor protruding part (104); a fourth semiconductor layer (102) on the third semiconductor layer (101); a gate insulating layer (105) disposed along the trench (103); a first interlayer insulating layer (107) disposed along the trench (103); a first conductive layer (106) facing to the fourth semiconductor layer (102); a second conductive layer (108) on the first interlayer insulating layer (107) ; a second interlayer insulating layer (109) covering the second conductive layer (108); a third conductive layer (111) on the third semiconductor layer (101) and fourth semiconductor layer (102); a contacting part (110) connecting the third conductive layer (111) and third semiconductor layer (101); and a fourth conductive layer (114) formed on the second semiconductor layer (113). |
