High mobility strained channels for fin-based transistors

摘要

Techniques are disclosed for incorporating high mobility strained channels into fin-based transistors (e.g., FinFETs such as double-gate, trigate, etc), wherein a stress material is cladded onto the channel area of the fin. In one example embodiment, silicon germanium (SiGe) is cladded onto silicon fins to provide a desired stress, although other fin and cladding materials can be used. The techniques are compatible with typical process flows, and the cladding deposition can occur at a plurality of locations within the process flow. In some cases, the built-in stress from the cladding layer may be enhanced with a source/drain stressor that compresses both the fin and cladding layers in the channel. In some cases, an optional capping layer can be provided to improve the gate dielectric/semiconductor interface. In one such embodiment, silicon is provided over a SiGe cladding layer to improve the gate dielectric/semiconductor interface.

主权项

1. A semiconductor device, comprising:
a bulk silicon or silicon germanium (SiGe) substrate defining a fin, the fin being native to the substrate and having a channel region; a cladding layer of germanium or SiGe on one or more surfaces of the channel region of the fin; and SiGe source/drain material in source/drain regions adjacent the channel region.