发明名称 Solid-state imaging apparatus and method for manufacturing same
摘要 An insulating layer is layered above a substrate, and a plurality of pixel electrodes are formed above the insulating layer in a matrix with intervals therebetween. A photoelectric conversion layer and an opposing electrode are formed in respective order above the pixel electrodes. A dummy layer is formed above the insulating layer in a region that in plan-view is more peripheral than a pixel region in which the pixel electrodes are formed. The dummy layer is formed from the same material as the pixel electrodes. The dummy layer is composed of a plurality of dummy layer portions that are each equal to each of the pixel electrodes in terms of size in plan-view. The dummy layer functions as a support layer for planarization during polishing by chemical mechanical polishing.
申请公布号 US9184316(B2) 申请公布日期 2015.11.10
申请号 US201414158578 申请日期 2014.01.17
申请人 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. 发明人 Isono Shunsuke;Ueda Tetsuya
分类号 H01L31/0224;H01L27/146 主分类号 H01L31/0224
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. A solid-state imaging apparatus comprising: a substrate; an insulating layer above the substrate; a plurality of first electrodes in a pixel region above the insulating layer, the plurality of first electrode being arranged in a two dimensional array with intervals therebetween; a second electrode covering the first electrodes in plan-view; a photoelectric conversion layer between the second electrode and the first electrodes; a planarization support layer above the insulating layer, the planarization support layer being in a peripheral region of the pixel region; and a connecting electrode in a peripheral region of the planarization support layer in plan-view, the connecting electrode being configured to apply an electrical voltage to the second electrode, wherein the planarization support layer and the first electrodes are at a same layer level above the insulating layer, the planarization support layer is composed of a plurality of planarization support layer portions that are arranged above the insulating layer with intervals therebetween, each of the planarization support layer portions is equal to each of the first electrodes in terms of shape and size, and the intervals between the planarization support layer portions are equal to the intervals between the first electrodes.
地址 Osaka JP