Semiconductor device having embedded integrated passive devices electrically interconnected using conductive pillars

摘要

A semiconductor device includes a first conductive layer and conductive pillars disposed over the first conductive layer and directly contacting the first conductive layer. The semiconductor device includes an Integrated Passive Device (IPD) mounted to the first conductive layer such that the IPD is disposed between the conductive pillars. The IPD is self-aligned to the first conductive layer, and includes a metal-insulator-metal capacitor disposed over a first substrate and a wound conductive layer forming an inductor disposed over the first substrate. The semiconductor device includes a discrete capacitor mounted over the first conductive layer. The discrete capacitor is electrically connected to one of the conductive pillars. The semiconductor device includes an encapsulant disposed around the IPD, discrete capacitor, and conductive pillars, a first insulation layer disposed over the encapsulant and conductive pillars, and a second conductive layer disposed over the first insulating layer. The second conductive layer is electrically connected to the conductive pillars.

主权项

1. A semiconductor device, comprising:
a first insulating layer; a first conductive layer disposed over an opening in the first insulating layer; a plurality of conductive pillars disposed over the first conductive layer and electrically connected to the first conductive layer; a prefabricated integrated passive device (IPD) disposed over the first conductive layer between the conductive pillars, the prefabricated IPD including a substrate and a first passive device formed over the substrate; a discrete capacitor disposed over the first conductive layer and electrically connected to one of the conductive pillars; an encapsulant disposed around the prefabricated IPD, discrete capacitor, and conductive pillars; a second insulating layer formed in direct contact with the substrate of the prefabricated IPD, encapsulant, and conductive pillars opposite the first insulating layer and first conductive layer; and a second conductive layer formed over the second insulating layer and contacting the conductive pillars.