Nonvolatile storage element and method for manufacturing same

摘要

A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MOx (where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MOy (where x>y), and the third transition metal oxide layer having a composition expressed as MOz (where y>z).

主权项

1. A nonvolatile storage element comprising:
a first electrode; a second electrode; and a variable resistance layer provided between the first electrode and the second electrode, and having a resistance value that reversibly changes based on an electrical signal applied between the first electrode and the second electrode, wherein the variable resistance layer includes a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer, the first transition metal oxide layer having a composition expressed as MOx (where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MOy (where x>y), and the third transition metal oxide layer having a composition expressed as MOz (where y>z), wherein the second transition metal oxide layer is directly stacked on the first transition metal oxide layer, wherein the third transition metal oxide layer is directly stacked on the second transition metal oxide layer, and wherein an oxygen content atomic percentage of the first transition metal oxide layer is greater than an oxygen content atomic percentage of the second transition metal oxide layer, and the oxygen content atomic percentage of the second transition metal oxide layer is greater than an oxygen content atomic percentage of the third transition metal oxide layer.