Memory devices and methods of manufacturing the same

摘要

A magnetic memory device may include a substrate and a magnetic tunnel junction memory element on the substrate. The magnetic tunnel junction memory element may include a reference magnetic layer, a tunnel barrier layer, and a free magnetic layer. The reference magnetic layer may include a first pinned layer, an exchange coupling layer, and a second pinned layer. The exchange coupling layer may be between the first and second pinned layers, and the second pinned layer may include a ferromagnetic layer and a non-magnetic layer. The second pinned layer may be between the first pinned layer and the tunnel barrier layer, and the tunnel barrier layer may be between the reference magnetic layer and the free magnetic layer.

主权项

1. A magnetic memory device comprising:
a substrate; and a magnetic tunnel junction memory element on the substrate, wherein the magnetic tunnel junction memory element includes,
a reference magnetic layer including a first pinned layer, an exchange coupling layer, and a second pinned layer wherein the exchange coupling layer is between the first and second pinned layers, and wherein the second pinned layer includes a first ferromagnetic layer, a first non-magnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer sequentially stacked on the exchange coupling layer,a tunnel barrier layer wherein the second pinned layer is between the first pinned layer and the tunnel barrier layer, anda free magnetic layer wherein the tunnel barrier layer is between the reference magnetic layer and the free magnetic layer; wherein the first non-magnetic layer induces interfacial perpendicular magnetic anisotropy at an interface of the first non-magnetic layer and the second ferromagnetic layer, wherein the first non-magnetic layer and the second ferromagnetic layer have a first crystal structure, wherein the exchange coupling layer and the first ferromagnetic layer have a second cryptal structure, and wherein the first and second crystal structures are different.