Power semiconductor device and method for manufacturing the same

摘要

A power semiconductor device comprises a substrate, a first electrode, a conductive layer, at least one electrical connecting element, a plurality of doped semiconductor layers, an insulating layer, and a second electrode. The first electrode is formed on a surface of the substrate. The conductive layer is formed on another surface of the substrate. The electrical connecting element is formed through the substrate and electrically connects the first electrode and the conductive layer. The doped semiconductor layers are stacked on the conductive layer. The upper most semiconductor layer comprises two doped sub-regions. The insulating layer is formed on the plurality of doped semiconductor layers. The second electrode is formed on the insulating layer and at least extends on an area between the doped sub-regions.

主权项

1. A power semiconductor device comprising:
a substrate including a first surface and a second surface opposite to the first surface; a first electrode formed on the first surface; a conductive layer formed on the second surface; at least one connecting element formed through the substrate and configured to electrically connect the first electrode and the conductive layer; a first doped semiconductor layer formed on the conductive layer; a second doped semiconductor layer formed on the first doped semiconductor layer; a third doped semiconductor layer formed on the second doped semiconductor layer and comprising two doped sub-regions; an insulating layer formed on the third doped semiconductor layer; and a second electrode formed on the insulating layer and at least extending on an area between the two doped sub-regions; wherein the substrate is a dielectric substrate; wherein the first doped semiconductor layer, the second doped semiconductor layer, the third doped semiconductor layer, the insulating layer and the second electrode are disposed over the first electrode and the conductive layer.