NON-VOLATILE MEMORY DEVICE

摘要

A nonvolatile memory device according to an embodiment of the present invention comprises: a cell array area which includes multiple cells, and word lines and bit lines connected to the memory cells; a core circuit area which includes a page buffer circuit temporarily storing data input and output to the memory cells and a row decoder selecting a word line corresponding to an input address; and an input and output circuit area which includes a data input and output buffer circuit transmitting data to the page buffer circuit and receiving data from the page buffer circuit. In the input and output circuit area, a gate structure on a substrate and at least one asymmetric transistor including source and drain areas arranged asymmetrically from each other in the substrate with respect to the gate structure are disposed.