Semiconductor devices and formation methods thereof

摘要

A semiconductor device is provided and includes a substrate of a first conductivity type, a deep well of a second conductivity type, and a first high-side device. The deep well is formed on the substrate. The first high-side device is disposed within the deep well and includes an insulation layer of the second conductivity type, a well of the first conductivity type, first and second regions of the second conductivity type, and a first poly-silicon material. The insulation layer is formed on the substrate. The well is formed within the deep well. The first and second regions are formed within the well. The first poly-silicon material is disposed between the first region and the second region and on the deep well.

主权项

1. A semiconductor device comprising:
a substrate of a first conductivity type; a deep well of a second conductivity type, formed on the substrate; and a first high-side device, disposed within the deep well and comprising: a layer of the second conductivity type, formed on the substrate, wherein the layer is in direct contact with the substrate; a well of the first conductivity type, formed within the deep well, wherein the well is in direct contact with the layer and fully separated from the substrate by the layer; first and second regions of the second conductivity type, formed within the well, wherein each of the first and second regions are fully separated from the layer by the well; and a first poly-silicon material, disposed between the first region and the second region and on the deep well, wherein a normal prosection area of the layer with respect to the substrate is larger than a normal projection area of the well with respect to the substrate.