发明名称 Method of storing data in nonvolatile memory device and method of testing nonvolatile memory device
摘要 A method of storing data in a nonvolatile memory device comprises performing a program operation on target memory cells among multiple memory cells, performing a first verify operation to determine whether the target memory cells are in a program pass state or a program fail state, and as a consequence of determining that the target memory cells are in the program pass state, performing a second verify operation to determine whether the target memory cells exhibit a program error symptom.
申请公布号 US9183946(B2) 申请公布日期 2015.11.10
申请号 US201414153140 申请日期 2014.01.13
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Eun-Kyoung;Yoon Myoung-Won;Lee Jong-Chul;Kwong Oh-Suk;Lee Won-Chul
分类号 G11C16/06;G11C16/34;G11C29/08;G11C29/50 主分类号 G11C16/06
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A method of storing data in a nonvolatile memory device, comprising: performing a program operation on target memory cells among multiple memory cells; performing a first verify operation to determine whether the target memory cells are in a program pass state or a program fail state; and as a consequence of determining that the target memory cells are in the program pass state, performing a second verify operation to determine whether the target memory cells exhibit a program error symptom, wherein performing the second verify operation comprises: counting a number of program loops used to place the target memory cells in the program pass state; and determining whether the target memory cells exhibit a progressive error by comparing the number of the program loops with a reference number.
地址 Suwon-si, Gyeonggi-do KR