发明名称 |
Method of storing data in nonvolatile memory device and method of testing nonvolatile memory device |
摘要 |
A method of storing data in a nonvolatile memory device comprises performing a program operation on target memory cells among multiple memory cells, performing a first verify operation to determine whether the target memory cells are in a program pass state or a program fail state, and as a consequence of determining that the target memory cells are in the program pass state, performing a second verify operation to determine whether the target memory cells exhibit a program error symptom. |
申请公布号 |
US9183946(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US201414153140 |
申请日期 |
2014.01.13 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Eun-Kyoung;Yoon Myoung-Won;Lee Jong-Chul;Kwong Oh-Suk;Lee Won-Chul |
分类号 |
G11C16/06;G11C16/34;G11C29/08;G11C29/50 |
主分类号 |
G11C16/06 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A method of storing data in a nonvolatile memory device, comprising:
performing a program operation on target memory cells among multiple memory cells; performing a first verify operation to determine whether the target memory cells are in a program pass state or a program fail state; and as a consequence of determining that the target memory cells are in the program pass state, performing a second verify operation to determine whether the target memory cells exhibit a program error symptom, wherein performing the second verify operation comprises: counting a number of program loops used to place the target memory cells in the program pass state; and determining whether the target memory cells exhibit a progressive error by comparing the number of the program loops with a reference number. |
地址 |
Suwon-si, Gyeonggi-do KR |