Transistor, method of manufacturing the same, and electronic device including transistor

摘要

A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer.

主权项

1. A transistor comprising:
a channel layer comprising an oxynitride semiconductor; a gate electrode corresponding to the channel layer; a source electrode connected to a first region of the channel layer; a drain electrode connected to a second region of the channel layer; a hole blocking layer disposed between the channel layer and at least one of the source electrode and the drain electrode; and a current flowing region between the channel layer and at least one of the source and drain electrodes, the hole blocking layer being in the current flowing region, and the hole blocking layer being configured to allow a flow of electrons; wherein at least one of the source and drain electrodes has no region in direct contact with the channel layer due to the hole blocking layer.