| 发明名称 | Structure and method for defect passivation to reduce junction leakage for finFET device | ||
| 摘要 | The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate of a first semiconductor material; shallow trench isolation (STI) features formed in the semiconductor substrate; and a fin-like active region of a second semiconductor material epitaxy grown on the semiconductor substrate. The first semiconductor material has a first lattice constant and the second semiconductor material has a second lattice constant different from the first lattice constant. The fin-like active region further includes fluorine species. | ||
| 申请公布号 | US9184233(B2) | 申请公布日期 | 2015.11.10 |
| 申请号 | US201313779286 | 申请日期 | 2013.02.27 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | van Dal Mark |
| 分类号 | H01L21/02;H01L29/06;H01L21/265;H01L21/8234;H01L27/088;H01L21/762 | 主分类号 | H01L21/02 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A semiconductor structure, comprising: a semiconductor substrate of a first semiconductor material; shallow trench isolation (STI) features formed in the semiconductor substrate; and a fin-like active region of a second semiconductor material epitaxy grown on the semiconductor substrate, wherein the first semiconductor material has a first lattice constant and the second semiconductor material has a second lattice constant different from the first lattice constant, and the fin-like active region further includes an inactive doping species selected from the group consisting of sulfur and selenium. | ||
| 地址 | Hsin-Chu TW | ||