Methods for electron beam patterning

摘要

A method for electron-beam patterning includes forming a conductive material layer on a substrate; forming a bottom anti-reflective coating (BARC) layer on the conductive material layer; forming a resist layer on the BARC layer; and directing an electron beam (e-beam) to the sensitive resist layer for an electron beam patterning process. The BARC layer is designed such that a top electrical potential of the resist layer is substantially zero during the e-beam patterning process.

主权项

1. A method for electron-beam patterning, the method comprising:
forming a conductive material layer on a substrate; forming a bottom anti-reflective coating (BARC) layer with a selected capacitance and thickness on the conductive material layer, wherein the BARC layer includes a first dielectric material film of a first dielectric constant and a second dielectric material film of a second dielectric constant different from the first dielectric constant, wherein the BARC layer further includes a third dielectric material film having a third dielectric constant, wherein the second dielectric constant is different than the third dielectric constant; forming a resist layer on the BARC layer; and patterning the resist layer by directing an electron beam (e-beam) to the resist layer, wherein the BARC layer is selected such that a top electrical potential Φ of the resist layer is substantially zero during the e-beam patterning process.