发明名称 |
3Dメモリに適用するPECVD酸化物−窒化物スタック及び酸化物−シリコンスタック |
摘要 |
<p>A layer stack of different materials is deposited on a substrate in a single plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is used to form a first layer of a first material on the substrate. A plasma purge and gas purge are performed before a second processing gas is used to form a second layer of a second material on the substrate. The plasma purge and gas purge are repeated and the additional layers of first and second materials are deposited on the layer stack.</p> |
申请公布号 |
JP5808814(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
JP20130532837 |
申请日期 |
2011.09.28 |
申请人 |
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发明人 |
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分类号 |
H01L21/31;C23C16/42;H01L21/205;H01L21/316;H01L21/318;H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;H05H1/46 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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