Shift-register like magnetic storage memory and method for driving the same

摘要

A magnetic storage element according to an embodiment includes: a magnetic nanowire having a cross-sectional area varying in a first direction, the magnetic nanowire having at least two positions where the cross-sectional area is minimal; first and second electrode groups having the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a first region where the first electrodes overlap the second electrodes with the magnetic nanowire interposed in between and a second region where neither the first electrodes nor the second electrodes exist with the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a third region where the first electrodes exist and the second electrodes do not exist with the magnetic nanowire interposed in between and a fourth region where the first electrodes do not exist and the second electrodes exist with the magnetic nanowire interposed in between.

主权项

1. A magnetic storage element comprising:
a magnetic nanowire extending in a first direction, a cross-sectional area of the magnetic nanowire varying in the first direction, the cross-sectional area being perpendicular to the first direction, the magnetic nanowire having at least two positions where the cross-sectional area is minimal; first and second electrode groups having the magnetic nanowire interposed in between, the first electrode group including a plurality of first electrodes arranged at intervals in the first direction, the second electrode group including a plurality of second electrodes arranged at intervals in the first direction, the magnetic nanowire including at least one of a first region where the first electrodes overlap the second electrodes with the magnetic nanowire interposed in between and a second region where neither the first electrodes nor the second electrodes exist with the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a third region where the first electrodes exist and the second electrodes do not exist with the magnetic nanowire interposed in between and a fourth region where the first electrodes do not exist and the second electrodes exist with the magnetic nanowire interposed in between; a first insulating film located between the first electrodes and the magnetic nanowire; and a second insulating film located between the second electrodes and the magnetic nanowire.