发明名称 Backside illumination image sensor and image-capturing device
摘要 A backside illumination image sensor that includes a semiconductor substrate with a plurality of photoelectric conversion elements and a read circuit formed on a front surface side of the semiconductor substrate, and captures an image by outputting, via the read circuit, electrical signals generated as incident light having reached a back surface side of the semiconductor substrate is received at the photoelectric conversion elements includes: a light shielding film formed on a side where incident light enters the photoelectric conversion elements, with an opening formed therein in correspondence to each photoelectric conversion element; and an on-chip lens formed at a position set apart from the light shielding film by a predetermined distance in correspondence to each photoelectric conversion element. The light shielding film and an exit pupil plane of the image forming optical system achieve a conjugate relation to each other with regard to the on-chip lens.
申请公布号 US9184197(B2) 申请公布日期 2015.11.10
申请号 US201414555868 申请日期 2014.11.28
申请人 NIKON CORPORATION 发明人 Kusaka Yosuke
分类号 H01L27/146;H04N5/369;H04N5/225;H04N9/04 主分类号 H01L27/146
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A backside illumination image sensor that includes a semiconductor substrate with a plurality of pairs of photoelectric conversion elements formed thereat and a read circuit formed on a side where a front surface of the semiconductor substrate is present, and captures an image by outputting, via the read circuit, electrical signals generated as incident light having passed through an image forming optical system and having reached a side where a back surface of the semiconductor substrate is present, is received at a plurality of pairs of light receiving areas, each pair of light receiving areas being formed in each pair of the plurality of pairs of photoelectric conversion elements, comprising: an on-chip lens formed at a position set apart from the each pair of light receiving areas by a predetermined distance; a first separating area that is constituted with a type of semiconductor and that separates unit pixel areas from each other, each of the unit pixel areas including the each pair of the plurality of pairs of photoelectric conversion elements; and a second separating area that is constituted with the type of semiconductor and that forms a boundary between the each pair of photoelectric conversion elements; wherein: the each pair of light receiving areas and an exit pupil plane at which an exit pupil of the image forming optical system is present achieve a conjugate relation to each other with regard to the on-chip lens.
地址 Tokyo JP