Manufacturing method of capacitor structure and semiconductor device using the same

摘要

The instant disclosure relates to a semiconductor device which includes a semiconductor substrate, at least one patterned reinforcing layer, a plurality of lower electrodes, and a supporting layer. The at least one patterned reinforcing layer is arranged above the semiconductor substrate, wherein the at least one patterned reinforcing layer has a plurality of reinforcing structures configured to define a plurality of alignment apertures. The lower electrodes are arranged on the semiconductor substrate, wherein N of the lower electrodes pass through each of the alignment apertures, where N is an integer greater than or equal to 1. The supporting layer is arranged above the at least one patterned reinforcing layer and between the lower electrodes.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; at least one patterned reinforcing layer arranged above the semiconductor substrate, wherein the at least one patterned reinforcing layer has a plurality of reinforcing structures configured to define a plurality of alignment apertures; a plurality of lower electrodes arranged on the semiconductor substrate, wherein N of the lower electrodes pass through each of the alignment apertures, where N is an integer greater than or equal to 2; and a supporting layer arranged above the at least one patterned reinforcing layer and between the lower electrodes.