Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOS

摘要

A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a diode-built-in double diffused metal oxide semiconductor transistor having a double diffused metal oxide semiconductor transistor and a diode, which are disposed in the substrate, wherein the double diffused metal oxide semiconductor transistor includes a gate, which is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode, wherein the driving signal is input from an external unit into the feedback unit, wherein the feedback unit stops driving the double diffused metal oxide semiconductor transistor when the feedback unit detects no current through the diode, and wherein the feedback unit drives the double diffused metal oxide semiconductor transistor so that current having a direction equal to a forward direction of the forward current flows through the double diffused metal oxide semiconductor transistor when the feedback unit detects a forward current through the diode.