发明名称 Method of manufacturing resin-encapsulated semiconductor device, and lead frame
摘要 A method of manufacturing a resin-encapsulated semiconductor device capable of supporting finer pitches comprises forming a metal plating layer on an inner lead and an outer lead of a lead. A semiconductor chip is mounted on a die pad, and an electrode on a surface of the semiconductor chip is electrically connected to the inner lead via a thin metal wire. The semiconductor chip, the thin metal wire and the inner lead are encapsulated by an encapsulation resin so that the outer lead extends beyond the encapsulation resin and is exposed. Resin burrs formed during resin encapsulation are removed by a defocused laser, and any metal adhered on the lead is lifted off.
申请公布号 US9184116(B2) 申请公布日期 2015.11.10
申请号 US201414174722 申请日期 2014.02.06
申请人 SEIKO INSTRUMENTS INC. 发明人 Kubota Shinya;Akino Masaru
分类号 H01L21/00;H01L23/495;H01L23/31;H01L23/00 主分类号 H01L21/00
代理机构 Adams & Wilks 代理人 Adams & Wilks
主权项 1. A method of manufacturing a resin-encapsulated semiconductor device, comprising: preparing a lead frame comprising a plurality of leads and a die pad, the plurality of leads each comprising an inner lead and an outer lead; forming a metal plating layer on a surface of the die pad and surfaces of the inner lead and the outer lead of each of the plurality of leads; mounting a semiconductor chip on the die pad having the metal plating layer formed thereon; connecting the semiconductor chip and the inner lead via a thin metal wire; exposing the outer lead by resin-encapsulating the semiconductor chip mounted on the die pad, the thin metal wire, and the inner lead with an encapsulation resin; removing a resin burr formed between adjacent ones of the outer leads by laser irradiation; removing the metal plating layer exposed from the encapsulation resin; and forming a solder plating layer on the outer lead from which the metal plating layer is removed.
地址 JP