Method for removing semiconductor fins using alternating masks

摘要

A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

主权项

1. A method for forming a semiconductor device pattern on a die, said method comprising:
defining active areas on said die; forming a pattern of a plurality of fins on said die, said fins being parallel to one another; forming a first fin-cut pattern in first removal areas other than said active areas, using a first fin-cut mask that includes a plurality of parallel first fin-cut regions in said first removal areas, each said first fin-cut region including a first strip corresponding to a first fin of said plurality of fins; and forming a second fin-cut pattern in second removal areas other than said active areas, using a second fin-cut mask that includes a plurality of parallel second fin-cut regions in said second removal areas, each said second fin-cut region including a second strip corresponding to a second fin of said plurality of fins, wherein said first and second fin-cut regions are parallel to and adjacent one another and are arranged in an alternating sequence, in said semiconductor device pattern.