发明名称 |
Integrated cluster to enable next generation interconnect |
摘要 |
Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns. |
申请公布号 |
US9184093(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US201414180098 |
申请日期 |
2014.02.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Naik Mehul B.;Mallick Abhijit Basu;Thadani Kiran V.;Cui Zhenjiang |
分类号 |
H01L21/44;H01L21/768;H01L23/532 |
主分类号 |
H01L21/44 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A method for forming passivation layers, comprising:
forming metal columns over a substrate, wherein each metal column has vertical surfaces and is doped with manganese, aluminum, zirconium, or hafnium; depositing a dielectric material between and over the metal columns; and curing the dielectric material to form a passivation layer on the vertical surfaces of the metal columns. |
地址 |
Santa Clara CA US |