Semiconductor device and method of forming the same

摘要

First dopant regions and second dopant regions are provided at both sides of the gate structures. Conductive lines cross over the gate structures and are connected to the first dopant regions. Each of the conductive lines includes a conductive pattern and a capping pattern disposed on the conductive pattern. Contact structures are provided between the conductive lines and are connected to the second dopant regions. Each of the contact structures includes a lower contact pattern disposed on the second dopant region and an upper contact pattern disposed on the lower contact pattern. A bottom surface of the upper contact pattern is lower than a top surface of the conductive pattern.

主权项

1. A semiconductor device comprising:
gate structures on a substrate; first dopant regions and second dopant regions disposed at both sides of the gate structures; conductive lines crossing the gate structures and connected to the first dopant regions, each of the conductive lines including a conductive pattern and a capping pattern on the conductive pattern; contact structures provided between the conductive lines and connected to the second dopant regions; spacer structures between the conductive lines and the contact structures, wherein each of the contact structures includes a lower contact pattern on a respective second dopant region and an upper contact pattern on the lower contact pattern; wherein a bottom surface of the upper contact pattern is lower than a top surface of the conductive pattern; and wherein each of the spacer structures includes an air gap, and an insulating spacer between the air gap and an adjacent contact structure; and a capping spacer covering the air gap and the insulating spacer, wherein a bottom surface of the capping spacer is in contact with a top surface of the lower contact pattern and the bottom surface of the upper contact pattern is lower than an interface between the capping spacer and the lower contact pattern.