| 发明名称 |
Magnetic layer patterning by ion implantation |
| 摘要 |
Provided herein is a method including conformally depositing a first layer over a patterned resist; depositing a second, thicker layer over the first layer; etching the second layer to expose the first layer; and patterning a magnetic layer by ion implantation in accordance with the patterned resist to form a patterned magnet layer. |
| 申请公布号 |
US9181618(B2) |
申请公布日期 |
2015.11.10 |
| 申请号 |
US201514635847 |
申请日期 |
2015.03.02 |
| 申请人 |
Seagate Technology LLC |
发明人 |
Feldbaum Michael;Wago Koichi;Kuo David |
| 分类号 |
C23C14/48;G11B5/84;G11B5/855;C23C14/06;C23C14/08 |
主分类号 |
C23C14/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
conformally depositing a first layer over a patterned resist; depositing a second, thicker layer over the first layer; etching the second layer to expose the first layer; and patterning a magnetic layer by ion implantation in accordance with the patterned resist. |
| 地址 |
Cupertino CA US |
