| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To remove deposits on a gas ejection part, an edge part of a wafer, etc., by supplying an activated cleaning gas to a gas flow passage extending from a gas duct 118 to a wafer end. <P>SOLUTION: A plasma processing apparatus includes: a vacuum vessel to which a vacuum exhaust device can be connected and the interior of which can be decompressed; gas supply means of supplying gas into the vacuum vessel; plasma generating means of making the gas supplied into the vacuum vessel into plasma; a sample table which is arranged in the vacuum vessel and holds a sample mounted on its upper surface; and a susceptor which covers an outer periphery of the sample table in a ring shape to protect the sample table against the plasma. In the plasma processing apparatus, the susceptor includes a gas filled part 113 in which the gas is introduced and stored, a gas ejection part 115 which ejects the gas filling the gas filled part to the side of a sample mount surface, and a transmission window 111 which introduces light emitted by the plasma in the filled part. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
