Dislocation in SiC semiconductor substrate

摘要

A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×105 cm−2. Thus, a silicon carbide semiconductor substrate enabling improved yield of semiconductor devices can be provided.

主权项

1. A semiconductor substrate having a main surface, formed of single crystal silicon carbide, said main surface comprising:
an outer circumferential area within 5 mm from an outer circumference; and a central area as an area other than the outer circumferential area, wherein when said central area is divided into square areas of 1 mm×1 mm, in any said square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×104 cm−2, wherein in said central area, density of dislocations of which Burgers vector is parallel to the <0001> direction is lower than density of dislocations of which Burgers vector includes components in the <0001> direction and <11-20> direction.