| 主权项 |
1. A method of manufacturing a variable resistance memory device, the method comprising:
forming an insulating layer over a semiconductor substrate; forming a hole the insulating layer; forming a lower electrode in the hole, wherein the lower electrode includes a side portion that is formed on sidewalls of the insulating layer that defines the hole and a bottom portion that is formed on a bottom surface that defines the bottom of the hole, wherein a thickness of the side portion of the lower electrode is about 85% to about 95% of a thickness of the bottom portion of the lower electrode; forming, in a step-wise manner, a spacer on the lower electrode, the spacer exposing a portion of the lower electrode; forming a variable resistance material layer in the hole; and forming an upper electrode on the variable resistance material layer,
wherein the forming the lower electrode includes:forming a lower electrode material over the insulating layer, so that the lower electrode material covers the sidewalls of the insulating layer that defines the hole and the bottom surface that defines the hole;forming a sacrificial layer on the lower electrode material;removing the sacrificial layer so that a portion of the sacrificial layer remains in the hole;removing a portion of the lower electrode material, formed on the sidewalls of the insulating layer that define the hole, to be substantially coplanar with the portion of the sacrificial layer that remains in the hole; andremoving the portion of the sacrificial layer that remains in the hole. |
