Photoelectric conversion device

摘要

A photoelectric conversion device includes a front electrode, a photoelectric conversion layer formed of a semiconductor material, a transparent conductive layer formed of a transparent conductive oxide, a back electrode formed of a metal material, and a conductive layer formed of a semiconductor material primarily of silicon and having a refractive index higher than the transparent conductive layer contactually sandwiched between the transparent conductive layer and the back electrode. The photoelectric conversion device exhibits a high photoelectric conversion efficiency by keeping low the electrical resistance between the semiconductor layer and the back electrode and by increasing reflectance for light having passed though the semiconductor layer.

主权项

1. A photoelectric conversion device comprising:
a front electrode, a photoelectric conversion layer formed of a semiconductor material, a transparent conductive layer formed of a transparent conductive oxide, a conductive layer formed of a semiconductor material consisting primarily of silicon and having a refractive index higher than the transparent conductive layer, a back electrode formed of a metal material; said front electrode, said photoelectric conversion layer, said transparent conductive layer, said conductive layer, and said back electrode arranged in that order; the conductive layer contactually sandwiched between the transparent conductive layer and the back electrode; the back electrode directly contacting the conductive layer along a plane parallel to the major longitudinal axis of the conductive layer; the refractive index of the conductive layer being 3.4 or higher at a wavelength of 850 nm; and a film thickness of the conductive layer being between 30 nm and 300 nm.