发明名称 |
Large-area transmissive type optical image modulator and method of manufacturing the same and optical apparatus including transmissive type optical image modulator |
摘要 |
A large-area transmissive type optical image modulator, a method of manufacturing the same, and an optical apparatus including the transmissive type optical image modulator are provided. The large-area transmissive type optical image modulator includes: a base substrate; a first expitaxial layer formed on the base substrate; a second expitaxial layer formed on the first expitaxial layer; a first electrode formed on the first expitaxial layer and spaced apart from the second expitaxial layer; a second electrode formed on the second expitaxial layer; and a transparent substrate covering the second expitaxial layer and the second electrode, wherein the base substrate includes a through hole corresponding to a light emitting area, and the first expitaxial layer may include an n-type or p-type doping material. |
申请公布号 |
US9182614(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US201213725010 |
申请日期 |
2012.12.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Cho Yong-chul;Lee Sang-hun;Park Yong-hwa;Park Chang-young;Kwon Jong-oh;You Jang-woo;Yoon Hee-sun |
分类号 |
G02F1/00;H01L31/18;G01C3/08;G02F1/015 |
主分类号 |
G02F1/00 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A transmissive type optical image modulator comprising:
a base substrate; a first epitaxial layer formed on the base substrate; a plurality of second epitaxial stacks formed on the first epitaxial layer, wherein each of the plurality of second epitaxial stacks is separated from a neighboring one of the plurality of second epitaxial stacks by a trench disposed therebetween; a plurality of first electrodes formed on the first epitaxial layer and spaced apart from the plurality of second epitaxial stacks; a plurality of second electrodes, each formed on a respective one of the plurality of second epitaxial stacks; and a transparent substrate covering the plurality of second epitaxial stacks and the plurality of second electrodes, wherein the base substrate comprises a through hole corresponding to a light emitting area, and the first epitaxial layer is a continuous layer which corresponds to the plurality of second epitaxial stacks formed thereon, and wherein the first epitaxial layer comprises a top surface exposed by the plurality of second epitaxial stacks. |
地址 |
Suwon-si KR |