PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method capable of performing plasma processing to a substrate with a diameter of 1 inch or less in a state where power usage is reduced.SOLUTION: A plasma processing apparatus is configured by: a processing chamber 2 that consists of a lower trunk part 5 and an upper trunk part 6 and the like; a process gas supply mechanism 15 for supplying a process gas into the processing chamber 2; a coil 20 disposed outside the upper trunk part; a coil power supply mechanism 25 for supplying a high-frequency power to the coil 20; and a base 30 for placing a substrate K. A plasma generation space 4 is established in an inner space of the upper trunk part 6. An inner diameter of the upper trunk part 6 is 20 mm or more and 50 mm or less. By supplying to the coil 20 a high-frequency power having a frequency of 40 MHz or more and 100 MHz or less and having a magnitude of 2 W or more and 50 W or less, the process gas in the plasma generation space 4 is turned into a plasma.