REMOVAL METHOD OF WORK-AFFECTED LAYER OF SiC SEED CRYSTAL, SiC SEED CRYSTAL, AND PRODUCTION METHOD OF SiC SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method capable of preventing decline of a growth rate, even when performing MSE method by using a cut SiC seed crystal.SOLUTION: A SiC seed crystal used as a seed crystal for a metastable solvent epitaxy method (MSE method) is heated under a Si atmosphere and the surface is etched, to thereby remove a work-affected layer generated by cutting. Since the work-affected layer generated in the SiC seed crystal blocks growth in the MSE method, decline of a growth rate can be prevented by removing the work-affected layer.