| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of reducing defects generated on the film surface, even when lowering a film deposition start temperature, and to provide a film deposition method and a film deposition program.SOLUTION: A microwave feeding part 11, 12, 17, 18, 19, 21 controls through a control part 6 so that a feeding time per pulse of a pulsing microwave pulse 38 fed along a treatment surface of a material 8 to be processed becomes 100 μ-seconds or less, in the state where a treatment surface temperature of the material 8 to be processed is 300°C or lower. |
