| 摘要 |
PROBLEM TO BE SOLVED: To provide a relatively large-sized semiconductor light-emitting element capable of achieving both a high current density and a high light extraction area.SOLUTION: A semiconductor light-emitting element comprises: a semiconductor layer that includes a p-type semiconductor layer 31, an active layer 33 formed on an upper layer of the p-type semiconductor layer, and an n-type semiconductor layer 35 formed on an upper layer of the active layer; a p-type electrode 23 formed under the p-type semiconductor layer; an n-type electrode 41 electrically connected with the n-type semiconductor layer; and a recessed part that at least penetrates through the p-type semiconductor layer and the active layer and reaches the n-type semiconductor layer. The n-type electrode is arranged so as to be inserted into the recessed part while keeping an insulation state from the active layer, the p-type semiconductor layer, and the p-type electrode. When a length of one side of the principal surface of the semiconductor layer is defined as L, and a ratio of a total area of the n-type electrode to an area of the principal surface of the semiconductor layer is defined as A, the following expression is satisfied in a case where a current of 1 (A) is injected. |
