| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device having a MOS transistor that can suppress a noise signal produced when a transfer gate is in an off state.SOLUTION: A solid-state image pickup device comprises: a photoelectric conversion element arranged on a semiconductor substrate; a first semiconductor region of a first conductivity type, which is arranged on the semiconductor substrate and to which an electric charge from the photoelectric conversion element is transferred, and which constitutes an input node of an amplification part; a gate electrode of a MOS transistor that uses the first semiconductor region as a source region or a drain region; and a second semiconductor region of a second conductivity type opposite to the first conductivity type that is arranged inside the first semiconductor region, and arranged in contact with a boundary surface between the semiconductor substrate and an insulating film at a position under an end part on the first semiconductor region side of the gate electrode. |
