A MANUFACTURING METHOD OF TWO-DIMENSIONAL TRANSITION METAL-CHALCOGEN COMPOUNDS USING NUCLEATION KINETICS CONTROL

摘要

The present invention provides a method for preparing a two-dimensional transition metal-chalcogen compound by using control of nucleation kinetics. According to a first embodiment of the present invention, the preparation method comprises the steps of: (A) growing a single atomic layer of a first transition metal-chalcogen compound on a silicon oxide substrate at a first temperature; (B) combining a single atomic layer of a second transition metal-chalcogen compound into the first transition metal-chalcogen compound to start nucleation of the second transition metal-chalcogen compound from the edge of the first transition metal-chalcogen compound; (C) achieving the growth of heterogeneous horizontal stitching at a second temperature by sequential single layer crystallization to grow the second transition metal-chalcogen compound on the silicon oxide substrate in a horizontal direction; and (D) combining a single crystal of the horizontally grown second transition metal-chalcogen compound and making a chemical reaction to form a polycrystalline single atomic layer thin film. According to the present invention, a heterogeneous two-dimensional stack and a stitching single layer are provided by control of two-dimensional nucleation kinetics during the sequential growth to prepare a hexagon-on-hexagon unit cell stack and a hexagon-by-hexagon stitching without rotational mismatch between layers, thereby allowing provision of a new electronic and optical semiconductor platform having a large area to be accurately controlled within a final size limit.